A planarized shallow-trench-isolation for GaAs devices fabrication using liquid phase chemical enhanced oxidation process
Electron Device Letters, IEEE(2002)
摘要
A new planarized trench isolation technique for GaAs devices fabrication by a liquid phase chemical-enhanced oxidation (LPCEO) method is proposed. The LPCEO-trench-isolation technique can be operated at low temperature with a simple and low-cost process. As compared with conventional mesa isolation, the LPCEO-trench-isolation can provide better planarity and isolation properties. Finally, GaAs MOSFETs fabricated with LPCEO-trench-isolation and selective oxidized gate both by the LPCEO method are demonstrated.
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关键词
III-V semiconductors,MOSFET,electron mobility,gallium arsenide,isolation technology,microwave field effect transistors,oxidation,GaAs,MOSFETs,electron mobility,liquid phase chemical enhanced oxidation process,low-cost process,mesa isolation,microwave discrete device,planarity,planarized shallow-trench-isolation,selective oxidized gate
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