Design perspective against random dopant fluctuation and process variation for scaling multi-gate devices

Journal of Computational Electronics, Volume 5, Issue 4, 2006, Pages 319-322.

Cited by: 3|Views0

Abstract:

Multi-gate devices such as DG (Double Gate), SG (Single Gate) and tri-gate, are extensively examined and expected to be one of the promising device structures beyond bulk MOSFETs. We demonstrate the basic characteristics considering random dopant fluctuation for novel device structures and study the sensitivity against process variation...More

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