k-nonconserving transition in heavily doped LPE grown n-type In0.5Ga0.5P

Solid State Communications, pp. 7-12, 1992.

Cited by: 3|Bibtex|Views0|DOI:https://doi.org/10.1016/0038-1098(92)90396-Q
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Abstract:

Heavily unintentionally doped n-type InGaP was grown by LPE technique. Temperature and excitation power dependence of PL measurements were carried out to investigate the first observed 2.107 eV PL peak in In 0.5 Ga 0.5 P and we confirmed the first k -nonconserving optical transition in In 0.5 Ga 0.5 P. Also the unintentionally doped major...More

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