Numerical study of thermoconvection and dopant transport mechanisms in the process of Si growth by floating-zone technique under microgravity

Numerical simulation of thermogravitational and thermocapillary convection in the melt zone of Si grown by floating zone technique (FZT) is considered. The problem is solved for microgravity that corresponds to conditions of crystal growth on an orbital station. Special attention is given to the analysis of dopant distribution in the melt. One of the possible methods of thermocapillary convection suppression is described.