Effects of H/sub 2/ annealing and polysilicon emitter structure on H/sub FE/ of n-p-n bipolar junction transistors

Kyewon Maeng, Dae-Hyung Cho,Tae-jin Kim, Dongkyun Nam, S. Bae

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING（2005）

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摘要

This paper presents the effects of H/sub 2/ annealing and polysilicon emitter structures on H/sub FE/ characteristics of n-p-n bipolar junction transistors. The increase of the number of H/sub 2/ annealing steps results in the device performance (H/sub FE//spl times/V/sub A/) improvement by 27.8%, due to the formation of H-Si dangling bonds, which allow the decrease of the base current. In additio...

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关键词

Annealing,Grain boundaries,Plasma applications,Plasma immersion ion implantation,Etching,Ion implantation,MONOS devices,Hydrogen,Plasma density,Large scale integration

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