The use of H2 and NH3 ion implantation in the passivation of defects in silicon ribbon grown by the ribbon-against-drop technique

E. Courcelle,J.C. Muller,P. Siffert,C. Belouet

Solar Cells（1985）

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摘要

Hydrogen passivation by means of ion implantation using H2 and a more easily ionizable molecule, NH3, has been investigated for solar cells fabricated with silicon ribbon grown by the ribbon-against-drop technique.

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关键词

ion implantation,ion beam,crystal growth

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