A novel technique for fabricating high reliable trench DMOSFETs using self-align technique and hydrogen annealing
Electron Devices, IEEE Transactions(2003)
摘要
A novel technique for fabricating high reliability trench DMOSFETs using three mask layers is realized to obtain cost-effective production capability, higher cell density and current driving capability, and higher reliability. This technique provides a unit cell with 2.3∼2.4 μm pitch and a channel density of 100 Mcell/in2. Specific on-resistance is 0.36 mΩ·cm2 with a blocking voltage of 43 V at a gate voltage of 10 V and 5 A source-to-drain current. The time to breakdown of gate oxide grown on the hydrogen annealed trench surface is much longer than that of oxide grown on a nonhydrogen annealed trench surface.
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关键词
annealing,power MOSFET,semiconductor device breakdown,semiconductor device reliability,semiconductor technology,10 V,2.3 to 2.4 micron,43 V,5 A,blocking voltage,cell density,channel density,cost-effective production capability,current driving capability,gate oxide time to breakdown,gate voltage,high reliability trench DMOSFETs,hydrogen annealing,mask layers,self-align technique,source-to-drain current,specific on-resistance,trench surface,unit cell
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