Theoretical study of a channel-doped separate gate Si MOSFET (SG-MOSFET) by two-dimensional computer simulation
IEEE Transactions on Electron Devices（1981）
摘要
A new device structure is proposed for Si MOSFET, featuring an insulated gate structure, channel doping, and finite spacing between gate and source and between gate and drain. Two-dimensional numerical analysis shows that punchthrough is suppressed and that minimum gate length, limited bypunchthrough or VTshift, is extended into the submicrometer range.
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关键词
gallium arsenide,numerical analysis,doping,field effect transistor,computer simulation,charge carrier density,threshold voltage
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