Features of the recombination processes in InGaN/GaN based LEDs at high densities of injection current
Technical Physics Letters(2009)
摘要
It is established that the low-frequency noise density S in InGaN/GaN based light-emitting diodes (LEDs) operating a current densities j > 20 A/cm 2 depends on the current density as S ∼ j 3 . This dependence is indicative of the formation of new nonradiative recombination centers, which may account for a drop in the external quantum efficiency of LEDs operating at high current densities.
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关键词
85.60.Jb,81.05.Ea,81.07.St,71.55.-i,72.20.Jv
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