High quality GaN grown at high growth rates by gas-source molecular beam epitaxy

High quality GaN has been grown by gas-source molecular beam epitaxy (MBE) using ammonia as the nitrogen source. A growth rate as high as 1 /spl mu/m/h, which is an order of magnitude higher than previously reported for the growth of GaN by MBE, has been achieved. Strong reflection high-energy electron diffraction (RHEED) intensity oscillations have been observed during the growth, making in situ ...