Effect of annealing at argon pressure up to 1.2 GPa on hydrogen-plasma-etched and hydrogen-implanted single-crystalline silicon

Effect of annealing at up to 1400 K under argon pressure up to 1.2 GPa on hydrogen-plasma-etched and hydrogen-implanted Czochralski or floating-zone-grown single-crystalline-silicon (FZ), were investigated by secondary ions mass spectrometry (SIMS), X-ray, transmission electron microscopy (TEM), electrical, infrared and photoluminescence (PL) methods. External stress during annealing of hydrogen-containing Si results in suppression of hydrogen out-diffusion, but in its pronounced diffusion into the sample depth. The result is also stress-stimulated creation of small bubbles, thermal donors and crystallographic defects and prevention of sample splitting.