Analytical Threshold Voltage Model for Double-Gate Schottky Source/Drain Silicon-on-Insulator Metal Oxide Semiconductor Field Effect Transistor

JAPANESE JOURNAL OF APPLIED PHYSICS, pp. 8311.0-8316.0, 2008.

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Abstract:

We modify a theoretically derived model for double-gate silicon-on-insulator metal oxide semiconductor field effect transistor (SOI MOSFET) and establish new analytical threshold voltage model for double-gate Schottky source/drain SOI MOSFET. We show the procedure for deriving this model and present a high accuracy of this model in compar...More

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