Analytical Threshold Voltage Model for Double-Gate Schottky Source/Drain Silicon-on-Insulator Metal Oxide Semiconductor Field Effect Transistor

We modify a theoretically derived model for double-gate silicon-on-insulator metal oxide semiconductor field effect transistor (SOI MOSFET) and establish new analytical threshold voltage model for double-gate Schottky source/drain SOI MOSFET. We show the procedure for deriving this model and present a high accuracy of this model in comparison with the numerical data obtained with a two-dimensional device simulator. We found that we can get the same natural length obtained using a conventional double-gate device and better short-channel effect suppression using double Schottky source/drain SOI MOSFET. Our analytical model can be used for designing Schottky barrier MOSFET with efficiency and accuracy.