AlN/GaN/InGaN Coupling-Channel HEMTs for Improved g m and Gain Linearity
IEEE Transactions on Electron Devices(2021)
摘要
In this article, we report on the effective transconductance ( ${g}_{m}$ ) and gain linearity improvement of submicrometer gate AlN-barrier-based transistors using GaN/InGaN coupling-channel structures. The fabricated AlN/GaN/InGaN coupling-channel high electron mobility transistor (CC-HEMT) showed flat ${g}_{m}$ profile, greatly reduced ${g}_{m}$ derivatives, and constant dynamic source resis...
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关键词
MODFETs,HEMTs,Logic gates,Linearity,Silicon compounds,Resistance,III-V semiconductor materials
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