Effects of High-Energy Electron Irradiation on ZnO/Si MSM Photodetectors

Frank Catalfamo,Tingfang Yen,Juhyung Yun,Wayne A. Anderson

Journal of Electronic Materials（2010）

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摘要

ZnO/Si metal–semiconductor–metal photodetectors (MSM-PDs) were subjected to high-energy electron irradiation (HEEI) to total fluence of 2 × 10 13 cm −2 . ZnO/Si MSM-PDs demonstrated at least 43

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关键词

ZnO/Si MSM photodetector,radiation resistance,room-temperature annealing

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