High-performance planar Al0.48In0.52As/In0.53Ga0.47As high electron mobility transistors

We have fabricated Al0.48In0.52As/In0.53Ga0.47As HEMTs using argon implant isolation with rapid thermal annealing that have device-to-device leakage current similar to that measured for mesa-isolated HEMTs. The argon implant-isolated Al0.48In0.52As/In0.53Ga0.47As HEMTs with gate length of 0.15μm have measured ft and fmax of 140 and 200GHz, respectively. This performance is comparable to that of the mesa-isolated HEMTs.