Study of surface microtopography of InAlAs/InP heterostructures grown by MBE

Lu Taijing,Mai Zhenhoug,Jiang Chao, T. Sekiguchi,C.K. Ong, T. Ogawa,Zhou Jun Ming,K. Sumino

Solid State Communications（1994）

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摘要

This paper reports the results of surface microtopographic study on InAlAs/InP heterostructures. There are many precipitates enriched in In on the as-grown InAlAs surface and when the size of the precipitates is larger than a critical size of 10 μm, they act as growth centers to form an eccentric multi-monomolecular growth spiral on the (100) face.

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关键词

a: thin films,c: impurities in semiconductors,b: epitaxy

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