Calibrated Hydrodynamic Simulation of Deeply-Scaled Well-Tempered Nanowire Field Effect Transistors

In this work, we first extract Hydrodynamic (HD) parameters from a computationally intensive full-band Monte Carlo (MC) solution via the MOCA simulator. We are then able to achieve good fits between the calibrated HD and MC velocity profile of a near ballistic double gated FET (DGFET). Moreover, we demonstrate good fits using bulk-Si HID parameters between the IN characteristics of HD simulation and the measured data of deeply scaled Silicon nanowire field effect transistors (SNWFETs).