Impact of Heavy Ion Energy and Nuclear Interactions on Single-Event Upset and Latchup in Integrated Circuits

P. E. Dodd, J. R. Schwank,M. R. Shaneyfelt,J. A. Felix,P. Paillet,V. Ferlet-Cavrois,J. Baggio,R. A. Reed,K. M. Warren,R. A. Weller,R. D. Schrimpf,G. L. Hash,S. M. Dalton,K. Hirose, H. Saito

IEEE Transactions on Nuclear Science（2007）

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摘要

The effects of heavy ion energy and nuclear interactions on the single-event upset (SEU) and single-event latchup (SEL) response of commercial and radiation-hardened CMOS ICs are explored. Above the threshold LET for direct ionization-induced upsets, little difference is observed in single-event upset and latchup cross sections measured using low versus high energy heavy ions. However, significant...

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关键词

Single event upset,Circuit testing,Ionization,Life estimation,Ion accelerators,Packaging,Laboratories,Protons,CMOS integrated circuits,Energy measurement

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