High temperature physical modeling and verification of a novel 4H-SiC lateral JFET structure.
Microelectronics Reliability(2013)
摘要
•The unique behavior of a novel 4H-SiC LJFET structure is studied.•A physical model covering static and dynamic characteristics is established.•The model is verified by numerical simulation and experimental measurement.•Good agreements among three sets of results are achieved at 300°C.
更多查看译文
关键词
h-sic
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要