Pulsed Laser Annealing of Zinc Implanted Gaas

SS KULAR,BJ SEALY,KG STEPHENS,DR CHICK,QV DAVIS, J EDWARDS

Electronics letters（1978）

引用 19|浏览7

暂无评分

摘要

Samples of n type GaAs implanted with 1015Zn+/cm2 at room temperature were irradiated with a ruby laser of pulse length 0.8 ms. For samples coated with Si3N4 a laser energy of 1.5-2.5 J/cm2 produced electrical activity of 40-50% of the implanted dose. Peak hole concentrations up to about 7 × 1019 cm-3 were measured. Uncoated samples irradiated with similar laser energies were not electrically acti...

查看译文

关键词

annealing,carrier density,carrier mobility,gallium arsenide,III-V semiconductors,ion implantation,laser beam applications,semiconductor technology,zinc

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要