Laterally overgrown GaN/InGaN multi-quantum well heterostructures: Electrical and optical properties

Alexander Polyakov,Anatoliy Govorkov,Nikolay Smirnov,Alexander Markov,In-Hwan Lee,Haeng-Keun Ahn,Sergey Karpov,Stephen Pearton

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE（2010）

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摘要

Multi-quantum well (MQW) GaN/InGaN structures prepared by epitaxial lateral overgrowth were characterized by various techniques to better understand the difference of the materials properties and heterostructure operation in the wing and window regions. Detailed interpretation of the characterization data is given, invoking quantum-mechanical simulation of the grown heterostructures. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

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关键词

electrical properties,GaN/InGaN,MOCVD,optical properties,quantum wells,simulation

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