Milliwatt-class non-polar a-plane InGaN/GaN light-emitting diodes grown directly on r-plane sapphire substrates

Current Applied Physics, pp. 1407-1410, 2010.

Cited by: 9|Bibtex|Views2|DOI:https://doi.org/10.1016/j.cap.2010.05.003
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Abstract:

Non-polar a-plane (112¯0) light-emitting diodes (LEDs) in InGaN/GaN multiple quantum well structures were successfully fabricated by metal organic chemical vapor deposition (MOCVD) directly grown on r-plane (11¯20) sapphire substrates. The full width at half maximums (FWHMs) of the X-ray rocking curve (XRC) of an a-plane GaN template alon...More

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