Chemical vapor deposition and electrical characterization of sub-10nm diameter InSb nanowires and field-effect transistors

Synthesis of InSb nanowires using a chemical vapor deposition technique, as a function of growth temperature and time, was investigated. High aspect ratio InSb nanowires, having a diameter of about 5–10nm, were grown at 400°C for 1h on InSb (111) substrate onto which 60nm Au particle was used as a metal catalyst. The synthesized InSb nanowires had zinc blend single crystal structure without any stacking faults, and they were covered with a thin (∼1nm thick) amorphous layer. Electrical characterization of InSb nanowires was conducted utilizing a back-gated SNWFET. Device characterization demonstrated that NWs were n-type and exhibited a high Ion/Ioff ratio of 106 and device resistance of 250kΩ.