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Mobility in graphene double gate field effect transistors

Solid-State Electronics, no. 4 (2008): 514-518

Cited: 115|Views41
EI

Abstract

In this work, double-gated field effect transistors manufactured from monolayer graphene are investigated. Conventional top–down CMOS-compatible processes are applied except for graphene deposition by manual exfoliation. Carrier mobilities in single- and double-gated graphene field effect transistors are compared. Even in double-gated gra...More

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