Ab Initio Impact Ionization Rate In Gaas, Gan, And Zns
PHYSICAL REVIEW B(2005)
摘要
We have performed extensive ab initio band structure calculations within density functional theory using an exact exchange formalism with a local density approximation for correlations. The wave-vector-dependent impact ionization rate is determined for GaAs, GaN, and ZnS. A strong asymmetry of the microscopic scattering rate as well as a pronounced influence of the band structure is found. We present also energy-averaged impact ionization rates which can be used in ensemble Monte Carlo simulations of high-field electron transport in these materials.
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关键词
impact ionization,density function theory,electron transport,band structure,local density approximation
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