Mechanisms Leading to Single Event Upset

C. L. Axness,H. T. Weaver,J. S. Fu,R. Koga,W. A. Kolasinski

IEEE Transactions on Nuclear Science（1986）

引用 34|浏览7

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摘要

SRAM cell recovery time following a 140 MeV Krypton strike on a Sandia SRAM is modelled using a two-dimensional transient numerical simulator and circuit code. Strikes at both n- and p-channel "off" drains are investigated. Four principle results are obtained. The recovery time after a strike is strongly dependent on the drive of the restoring transistor. A struck "off" p-channel drain-to-gate cap...

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关键词

Single event upset,Random access memory,Feedback,Resistors,Circuit simulation,Laboratories,Aerospace simulation,Discrete event simulation,Argon,Transistors

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