Analysis of nano-scale MOSFET including uniaxial and biaxial strain

Journal of Computational Electronics, Volume 6, Issue 1, 2007, Pages 49-53.

Cited by: 5|Views1

Abstract:

In this paper, we focus on uniaxial and biaxial strain technologies, and we also investigate an optimum combination of strain method and channel direction. We linked the first principles band calculation program to the FUJITSU ensemble full band Monte Carlo simulator FALCON directly, which enables to incorporate arbitrary Si band struct...More

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