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Fabrication of Si single-electron transistors with precise dimensions by electron-beam nanolithography

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, no. 1 (2003): 1-5

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Determining the relationship between wire size and the electrical characteristics of a single-electron transistor (SET) can significantly shorten the development time required to make SETs practical devices. In this study, this relationship was examined by fabricating SETs with precise dimensions using electron-beam nanolithography. The h...更多

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作者
Y. Watanabe
Y. Watanabe
K. Yamazaki
K. Yamazaki
S. Horiguchi
S. Horiguchi
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