Ultrathin resist films patterning using a synchrotron radiation lithography system

Ultrathin polymethylmethacrylate (PMMA) films with a width of 17-59.5 nm have been prepared for X-ray resist by Langmuir-Blodgett (LB) technique on a trough using a steady laminar flowing subphase for monolayer compression. Using a synchrotron radiation (SR) lithography system as an exposure tool, patterns with 0.2 mu m critical dimensions have been obtained, limited to the mask used. Copyright (C) 1996 Elsevier Science Ltd.