Three-dimensional carrier profiling of individual Si nanowires by scanning spreading resistance microscopy.

Three-dimensional profiling of nanowires is carried out by repeatedly scanning the same nanowire with controlled force of the probing tip. This method abrades material from the measured cross section during each scan, allowing three-dimensional profiling. The typical shape of an individual Si nanowire, measured by scanning electron microscopy, and the respective resistivity images of several cross sections obtained by scanning spreading resistance microscopy are shown. [GRAPHICS] .