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Au which has a chemical affinity with thiol was used as the gate metal in order to immobilize deoxyribonucleic acid

An FET-type charge sensor for highly sensitive detection of DNA sequence.

Biosensors and Bioelectronics, no. 1 (2004): 69-74

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摘要

We have fabricated an field effect transistor (FET)-type DNA charge sensor based on 0.5μm standard complementary metal oxide semiconductor (CMOS) technology which can detect the deoxyribonucleic acid (DNA) probe’s immobilization and information on hybridization by sensing the variation of drain current due to DNA charge and investigated i...更多

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简介
  • Biotechnology and medical diagnostics are currently in need of devices able to continuously and selectively detect biological molecules.
  • The frequency of vibration varies according to the mass of single stranded DNA or double stranded DNA immobilized on the surface of QCM.
  • Optical measurement is begun by labeling a target DNA with fluorescent material, which reacts to a specific wavelength.
  • After that, it is hybridized with complementary DNA sequence.
  • Electrochemical measurement is very similar to optical measurement, but instead of a fluorescent material it makes use of the material which
重点内容
  • Biotechnology and medical diagnostics are currently in need of devices able to continuously and selectively detect biological molecules
  • Au which has a chemical affinity with thiol was used as the gate metal in order to immobilize deoxyribonucleic acid (DNA)
  • Variation of the drain current versus time was measured, which was induced by DNA charge due to the field effect
  • The magnitude of drain current increased when thiol DNA and target DNA were injected into the solution, because of the field effect due to the electrical charge of DNA molecules
  • The operating principle is explained on the basis of self assembled monolayer (SAM) and the field effect mechanism of MOSFET
结果
  • Results and discussion

    Electrical characteristics of the fabricated PMOSFET were measured at room temperature.
  • The threshold voltage was controlled by boron implantation in order to turn on device even at the small electrical potential induced by DNA charge.
  • A single stranded DNA immobilized on the gate is hybridized into a double stranded DNA.
  • This transformation causes the variation of electrochemical potential at the gate, which results in the variation of the drain current.
  • Variation of the drain current versus time was measured, which was induced by DNA charge due to the field effect
结论
  • An FET-type charge sensor has been fabricated by 0.5 ␮m standard CMOS technology in order to detect DNA probe’s charge and information of hybridization and its characteristics have been investigated.
  • Variation of the drain current versus time was measured, which was induced by DNA charge due to the field effect.
  • The drain current increased when thiol DNA and target DNA were injected into the solution, because of the field effect due to the electrical charge of DNA molecules.
  • The results show qualitatively good agreement with those of FET-type charge sensor
总结
  • Introduction:

    Biotechnology and medical diagnostics are currently in need of devices able to continuously and selectively detect biological molecules.
  • The frequency of vibration varies according to the mass of single stranded DNA or double stranded DNA immobilized on the surface of QCM.
  • Optical measurement is begun by labeling a target DNA with fluorescent material, which reacts to a specific wavelength.
  • After that, it is hybridized with complementary DNA sequence.
  • Electrochemical measurement is very similar to optical measurement, but instead of a fluorescent material it makes use of the material which
  • Results:

    Results and discussion

    Electrical characteristics of the fabricated PMOSFET were measured at room temperature.
  • The threshold voltage was controlled by boron implantation in order to turn on device even at the small electrical potential induced by DNA charge.
  • A single stranded DNA immobilized on the gate is hybridized into a double stranded DNA.
  • This transformation causes the variation of electrochemical potential at the gate, which results in the variation of the drain current.
  • Variation of the drain current versus time was measured, which was induced by DNA charge due to the field effect
  • Conclusion:

    An FET-type charge sensor has been fabricated by 0.5 ␮m standard CMOS technology in order to detect DNA probe’s charge and information of hybridization and its characteristics have been investigated.
  • Variation of the drain current versus time was measured, which was induced by DNA charge due to the field effect.
  • The drain current increased when thiol DNA and target DNA were injected into the solution, because of the field effect due to the electrical charge of DNA molecules.
  • The results show qualitatively good agreement with those of FET-type charge sensor
基金
  • This work was supported in part by BK21 program in Korea
引用论文
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