A Ga 2 O·11Al 2 O 3 nanonet prepared by interfacial reaction growth approach and its application in fabricating GaN nanowires

A Ga 2 O·11Al 2 O 3 nanonet was synthesized by using Ga 2 O 3 powder as the precursor to generate Ga 2 O vapor in H 2 atmosphere which further reacted with Al 2 O 3 at 730 °C to form Ga 2 O·11Al 2 O 3 at the interfaces of a porous anodic aluminum oxide (AAO) template. The prepared Ga 2 O·11Al 2 O 3 nanonet then served as a Ga 2 O-stablizing reservoir to fabricate single crystal GaN nanowires. The residual Ga 2 O 3 powder at the surface of the produced Ga 2 O·11Al 2 O 3 nanonet and the metallic Ga or Ga 2 O from the Ga 2 O·11Al 2 O 3 decomposition reacted with ammonia to yield GaN nanowires at 780 °C. The reaction mechanisms were investigated.