Processing Enhanced SEU Tolerance in High Density SRAMs
IEEE Transactions on Nuclear Science(1987)
摘要
We report theoretical calculations and experimental verification of an increase in memory cell SEU tolerance when Sandia's 2μm-technology 16K SRAMs are fabricated with a radiation-hardened 1-μm CMOS process. An advanced 2D transient transport-plus-circuit simulator has been employed to calculate the differential contributions from each of the vertical dimensional changes in the transition from the...
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关键词
Random access memory,Laboratories,Capacitance,Geometry,Contracts,Temperature,CMOS process,Cyclotrons,Doping,Substrates
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