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Low Temperature Metallic State Induced By Electrostatic Carrier Doping Of Srtio3
APPLIED PHYSICS LETTERS, no. 13 (2006)
Abstract
Transport properties of SrTiO3-channel field-effect transistors with parylene organic gate insulator have been investigated. By applying gate voltage, the sheet resistance falls below R-square similar to 10 k Omega at low temperatures, with carrier mobility exceeding 1000 cm(2)/V s. The temperature dependence of the sheet resistance taken...More
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