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Access resistor modelling for EEPROM's retention test vehicle.

Microelectronics Reliability(2013)

Cited 3|Views27
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Abstract
•Access resistor models explain maximum drain-source current in a CAST test vehicle.•The threshold voltage shift is explained by the sub-threshold slope.•Gate access resistor should have no effect on reading or programming.•Model is helpful to quantify the extrinsic cells in retention tests.•Memory lines inside array should not be longer than thousand cells per line.
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Key words
retention test vehicle,eeproms
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