Characteristics of $\hbox{HfO}_{2}$ /Poly-Si Interfacial Layer on CMOS LTPS-TFTs With $\hbox{HfO}_{2}$ Gate Dielectric and $\hbox{O}_{2}$ Plasma Surface Treatment
IEEE Transactions on Electron Devices(2008)
摘要
In this paper, high-performance complementary-metal-oxide-semiconductor low-temperature polycrystalline-silicon thin-film transistors (CMOS LTPS-TFTs) with HfO2 gate dielectric are fabricated on one wafer for the first time. Low threshold voltage and excellent subthreshold swing can be achieved simultaneously for N- and P-channel LTPS-TFTs without hydrogenation. In addition, the impacts of the HfO...
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关键词
Thin film transistors,High-K gate dielectrics,Threshold voltage,Very large scale integration
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