CVD Growth and Characterization of 4H-SiC Epitaxial Film on (11-20) As-Cut Substrates

Thick epilayers up to 60 mu m have been grown on (11 $(2) over bar $0) face SiC substrates at a growth rate of 15 mu m/hr by chemical vapor deposition (CVD). The epilayer surface is extremely smooth with a RMS roughness of 0.6 nm for a 20 mu m x 20 mu m area. Threading screw and edge dislocations parallel to the c-axis are present in the (11 $(2) over bar $0) substrate; however, they do not propagate into the epilayer. The I-V characteristics of the Schottky diodes on this face were studied. Basal plane (0001) dislocations with a density of similar to 10(5) cm(-2) were found in the (11 $(2) over bar $0) epilayers by molten KOH etching and electron beam induced current (EBIC) mode of the scanning electron microscope (SEM).