Two Channels Of Non-Radiative Recombination In Ingan/Gan Leds

The results of low-frequency noise study in blue InGaN/GaN light emitting diodes (LEDs) allow to suppose that there are two non-radiative recombination channels in InGaN/GaN LEDs: one of them is related to the extended defect system piercing the LED active region and other is related with the presence of point defects. The generation of new defects under current density more than 10 A/cm(2) was found. This process is reversible up to operation current density of about 200 A/cm(2). (C) 2009 Elsevier By. All rights reserved.