Blue/green light emitting diodes and laser diodes based on II–VI heterostructures grown on predeposited GaAs buffer layers

Jingjian Ren,D B Eason,Y Lansari,Zhongyuan Yu,K A Bowers,C Boney, B Sneed,J W Cook,J F Schetzina, M W Koch,G W Wicks

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B（1993）

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摘要

Blue/green light emitting diodes and laser diodes based on II-VI heterostructures have been grown on GaAs substrates with predeposited GaAs epilayers capped with As. Improved diode characteristics resulted, along with improved structural, electrical, and optical properties.

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关键词

zinc,light emitting diode,materials science,physical properties,gallium arsenide

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