Helium Implanted Silicon Waveguide Photodetectors For Optical Power Monitors
2006 OPTICAL FIBER COMMUNICATION CONFERENCE/NATIONAL FIBER OPTIC ENGINEERS CONFERENCE, VOLS 1-6(2006)
摘要
The enhanced photo-response of helium ion implanted silicon waveguides as a function of different anneal temperatures and durations is reported. The enhancement in responsivity at communication wavelength was sufficient for use as optical power monitors. (C) 2006 Optical Society of America.
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关键词
ion implantation,photoconductivity,optical waveguides,temperature,helium,silicon,photonic band gap,photodetectors,annealing
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