Effect Of Cleaning Processes Of Silicon Wafer On Surface Passivation And A-Si: H/C-Si Hetero-Junction Solar Cell Performances
KOREAN JOURNAL OF MATERIALS RESEARCH(2010)
摘要
This paper investigates the dependence of a-Si: H/c-Si passivation and heterojunction solar cell performances on various cleaning processes of silicon wafers. It is observed that the passivation quality of a-Si: H thin-films on c-Si wafers depends highly on the initial H-termination properties of the wafer surface. The effective minority carrier lifetime (MCLT) of highly H-terminated wafer is beneficial for obtaining high quality passivation of a-Si: H/c-Si. The wafers passivated by p(n)doped a-Si: H layers have low MCLT regardless of the initial H-termination quality. On the other hand, the MCLT of wafers incorporating intrinsic (i) a-Si: H as a passivation layer shows sensitive variation with initial cleaning and H-termination schemes. By applying the improved cleaning processes, we can obtain an MCLT of 100 mu sec after H-termination and above 600 mu sec after i a-Si: H thin film deposition. By adapting improved cleaning processes and by improving passivation and doped layers, we can fabricate a-Si: H/c-Si heterojunction solar cells with an active area conversion efficiency of 18.42%, which cells have an open circuit voltage of 0.670V, short circuit current of 37.31 mA/cm 2 and fill factor of 0.7374. These cells show more than 20% pseudo efficiency measured by Suns-V-infinity with an elimination of series resistance.
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关键词
solar cells, heterojunction, a-Si: H, H-termination, passivation
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