Room-temperature InAsSb photovoltaic detectors for mid-infrared applications

H. Shao,W. Li,A. Torfi,D. Moscicka,W. I. Wang

IEEE Photonics Technology Letters（2006）

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摘要

Novel noncryogenic InAsSb photovoltaic detectors grown by molecular beam epitaxy are proposed and demonstrated. The quaternary alloy In0.88Al0.12As0.80Sb0.20 is introduced as a wide bandgap barrier layer lattice matched to the GaSb substrate. The valence band edge of In0.88Al0.12As0.80Sb0.20 nearly matches with InAs0.91Sb0.09, leading to more efficient transport of photogenerated holes. The resul...

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关键词

Photovoltaic systems,Solar power generation,Detectors,Molecular beam epitaxial growth,Aluminum alloys,Tin alloys,Photonic band gap,Lattices,Substrates,Temperature

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