Delamination of Si by high dose H-ion implantation through thin SiO2 film (ESR characterization)
Materials Science and Engineering: B(2002)
摘要
Delamination of the silicon substrate has been studied by electron spin resonance (ESR) and thermal desorption spectroscopy (TDS) methods. The silicon surface layer was implanted with high dose H+ ions through a thin SiO2 layer. The ESR signals observed from the as-implanted silicon surface layer were composed of two kinds of paramagnetic defects, that is, E′-center (g=2.0009, ΔHpp=3.0 Oe) and hydrogen associated Si dangling bond (PH-center, g=2.0066, ΔHpp=7.0 Oe). The signal intensities of the E′-center and PH-center disappeared after annealing at 400°C. After the disappearance of these ESR centers, a new ESR center with an oxygen associated Si dangling bond (g=2.0045) was observed, and remained stable even after 1000°C annealing. The desorption of hydrogen from the Si substrate was observed after annealing at 500°C, at which temperature the PH-center disappeared.
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关键词
Defects,Delamination,Electron spin resonance,Hydrogen ion implantation,Silicon on insulator
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