Radiation effects of 200 keV and 1 MeV Ni ion on MgO single crystal

Effects of Ni ion implantation on MgO (100) single crystals were examined by Rutherford backscattering spectrometry with channeling and optical absorption measurements. Ni ions with energy of 1.0 MeV and 200 keV were implanted at room temperature in the dose range, 1×1015–1×1017 cm−2. By applying thermal annealing method, recovery of the radiation induced damage was followed and the distribution and lattice location of implanted Ni ions was analyzed. It was observed that the radiation induced defects in the as-implanted sample were formed near Ni ion distribution, which is different from the theoretical prediction by the E-DEP-1 code. After thermal annealing above 500°C, defects began to recover, and rapid recovery of the lattice order and simultaneous diffusion of implanted Ni were observed above 1100°C until they reach full recovery at 1400°C. A part of these changing phenomena was supported by the optical absorption measurements.