Parameter extraction using novel phenomena in nano-MOSFETs with ultra-thin (EOT=0.46–1.93 nm) high-K gate dielectrics

Novel features of and a new technique for parameter extraction are outlined here for MOS devices with ultra-thin high-K MOS devices. These parameters include the channel doping density, the doping density profile, and the flat-band voltage—all very important for the high-K technology, besides the surface potential, the gate dielectric cap...More