Parameter extraction using novel phenomena in nano-MOSFETs with ultra-thin (EOT=0.46–1.93 nm) high-K gate dielectrics

Thin Solid Films, pp. 178-182, 2006.

Cited by: 4|Bibtex|Views0|DOI:https://doi.org/10.1016/j.tsf.2005.09.082
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Abstract:

Novel features of and a new technique for parameter extraction are outlined here for MOS devices with ultra-thin high-K MOS devices. These parameters include the channel doping density, the doping density profile, and the flat-band voltage—all very important for the high-K technology, besides the surface potential, the gate dielectric cap...More

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