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Ultrashort Dead Time Of Photon-Counting Ingaas Avalanche Photodiodes

APPLIED PHYSICS LETTERS, no. 23 (2009): 231113

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avalanche photodiodes gallium arsenide III-V semiconductors indium compounds photodetectorsMore(4+)

Abstract

We report a 1.036 GHz gated Geiger mode InGaAs avalanche photodiode with a detection dead time of just 1.93 ns. This is demonstrated by full recovery of the detection efficiency two gate cycles after a detection event, as well as a measured maximum detection rate of 497 MHz. As an application, we measure the second order correlation funct...More

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A. J. Bennett

A. J. Shields

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