High-Speed and Uniform Self-Aligned InGaAs/InP HBTs for 40 Gb/s Fiber Optic Communications Applications
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS(2014)
摘要
We have developed the InGaAs/InP heterojunction bipolar transistor (HBT) fabrication process technology,. which is capable of producing multiplexer/demultiplexer-level ICs in high yield. A simple self-aligned process utilizing an overhung profile of an InGaAs emitter contact mesa enables narrow separation between the emitter contact mesa and base electrodes. With this fabrication process, we have obtained very high uniformity of HBT characteristics. The uniformity was evaluated by measuring HBT arrays consisting of two-dimensionally arranged 26 x 57 (1,482) HBTs. The average DC current gain at a collector current density of 1.0 x 10(5) A/cm(2) is 37.8 and the standard deviation is only 4.7%. A current gain cut-off frequency, f(T), of 190 GHz and a maximum oscillation frequency, f(max), of 280 GHz at a collector current, I-c, of 17 mA were achieved with a 0.8 x 5.8 mum(2) emitter HBT. The uniformity of RF properties was also excellent. The average f(T) and f(max) of the HBTs with a 0.8 x 5.8 mum(2) emitter contact mesa at I-c of 15 mA were 190 GHz and 256 GHz, and the standard deviations were 1.6% and 2.3%, respectively.
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关键词
heterojunction bipolar transistor,self-alignment,current gain,f(T),f(max),HBT array
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