Dominant subthreshold conduction paths in short-channel MOSFET's
IEEE Transactions on Electron Devices（1984）
摘要
Conduction modes in off-biased n+-polysilicon gate MOSFET's of both polarities have been analyzed by two-dimensional device simulations. It was found that the dominant leakage paths in p-channel and n-channel enhancement devices occur in the bulk and at the surface, respectively, atV_{GS} = V_{BS} = 0. The control of these two distinct modes is the flatband voltage of the gate. The situation is ex...
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关键词
stress,field effect transistor,impurities,computational modeling,boron,electron density,boundary conditions,dimensional analysis
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