A 0.5V 4Mb logic-process compatible embedded resistive RAM (ReRAM) in 65nm CMOS using low-voltage current-mode sensing scheme with 45ns random read time.
ISSCC（2012）
关键词
charge pump,low power electronics,data structure,nonvolatile memory,low voltage,resistive ram,cmos,boolean function,energy harvesting,leakage current,chip,sensors,data storage,cmos integrated circuits,system on a chip,boolean functions,data structures
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