Physical and chemical sputtering of graphite and SiC by hydrogen and helium in the energy range of 600 to 7500 eV

The erosion of pyrolytic graphite and silicon carbide due to the bombardment with monoenergetic hydrogen ions with energies of 600 to 7500 eV has been investigated in the temperature range of near room temperature to 750°C. The erosion yield of SiC is about 10−2 and shows no pronounced temperature dependence. In contrast to SiC the erosion yield of pyrolytic graphite shows a maximum at a temperature of about 600°C. The ratio of the maximum erosion yield to that at room temperature depends on the energy of the hydrogen ions and increases from about 11 at 3000 eV to 32 at 670 eV. The production of CH4 during the bombardment of the graphite has been found proportional to the erosion yield. When graphite was bombarded with He ions no hydrocarbon production and no temperature dependence of the erosion yield could be observed. The results are compared with values for the erosion yields of carbon by thermal atomic hydrogen taken from literature.